2SJ618(F)

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs: -
Current - Continuous Drain (Id) @ 25° C: 10A
Rds On (Max) @ Id, Vgs: -
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 130W
Package / Case: TO-3P-3, SC-65-3
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Manufacturer: Toshiba
Supplier Device Package: TO-3P(N)
Input Capacitance (Ciss) @ Vds: 2300pF @ 30V
Drain to Source Voltage (Vdss): 180V


Parameters:

Technical/Catalog Information	2SJ618(F)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	180V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	-
Input Capacitance (Ciss) @ Vds	2300pF @ 30V
Power - Max	130W
Packaging	Tube
Gate Charge (Qg) @ Vgs	-
Package / Case	2-16C1B (TO-247 N)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SJ618 F 2SJ618F