2SJ610 Selling Leads, Price trend, 2SJ610 DataSheet download, circuit diagram from SeekIC.com

Features: ·Low drain-source ON resistance: RDS (ON) = 1.85 Ω (typ.)·High forward transfer admittance: |Yfs| = 18 S (typ.)·Low leakage current: IDSS = −100 µA (VDS = −250 V)·Enhancement-mode: Vth = −1.5~−3.5 V (VDS = 10 V, ID = 1 mA)Specifications Characteri...

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SeekIC No. : 004225331 Detail

2SJ610: Features: ·Low drain-source ON resistance: RDS (ON) = 1.85 Ω (typ.)·High forward transfer admittance: |Yfs| = 18 S (typ.)·Low leakage current: IDSS = −100 µA (VDS = −250 V)·E...

2SJ610 Data Sheet

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Part Number:: 2SJ610
Supply Ability:: 5000

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Upload time: 2024/11/21

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Recent History
What is this?

2SJ600 evaluate
Features: • Low on-state resistance:RDS(on)1 = 50 m MAX. (VGS = 10 V, ID = 13 A)RDS(on)2 = 7...
2SJ601 evaluate
Features: • Low on-state resistance:RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 18 A)RDS(on)2 = 4...
2SJ602 evaluate
Features: • Super low on-state resistance:RDS(on)1 = 73 m MAX. (VGS = −10 V, ID = W...

Product Details

Description

Features:

·Low drain-source ON resistance: R_{DS (ON)} = 1.85 Ω (typ.)
·High forward transfer admittance: |Yfs| = 18 S (typ.)
·Low leakage current: I_DSS = −100 µA (VDS = −250 V)
·Enhancement-mode: V_th = −1.5~−3.5 V (V_DS = 10 V, I_D = 1 mA)

Specifications

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	-250	V
Drain-gate voltage (RGS =20 k)		V_DGR	-250	V
Gate-source voltage		V_GSS	±20	V
Drain current	DC (Note 1)	I_D	-2.0	A
Drain current	Pulse (t=1 ms) (Note 1)	I_DP	-4.0	A
Drain power dissipation		P_D	20	W
Single pulse avalanche energy (Note 2)		E_AS	180	mJ
Avalanche current		I_AR	-2.0	A
Repetitive avalanche energy (Note 3)		E_AR	2.0	mJ
Channel temperature		T_ch	150
Storage temperature range		T_stg	-55~150

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2SJ610

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