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2SJ605

Features: • Super low on-state resistance:RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 33 A)RDS(on)2 = 31 m MAX. (VGS = 4.0 V, ID = 33 A)• Low input capacitanceCiss = 4600 pF TYP. (VDS = 10 V, VGS = 0 A)• Built-in gate protection diodeSpecifications Parameter Symbol Ratings Uni...

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SeekIC No. : 004225326 Detail

2SJ605: Features: • Super low on-state resistance:RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 33 A)RDS(on)2 = 31 m MAX. (VGS = 4.0 V, ID = 33 A)• Low input capacitanceCiss = 4600 pF TYP. (VDS = 10 V,...

2SJ605 Data Sheet

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Part Number:
2SJ605
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Product Details

Description



Features:

• Super low on-state resistance:
RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 33 A)
RDS(on)2 = 31 m MAX. (VGS = 4.0 V, ID = 33 A)
• Low input capacitance
Ciss = 4600 pF TYP. (VDS = 10 V, VGS = 0 A)
• Built-in gate protection diode


Specifications

Parameter Symbol Ratings Unit
Drain to Source Voltage(VGS = 0 V) VDSS 60 V
Gate to Source Voltage(VDS = 0 V) VGSS ±20 V
Drain Current (TC = 25°C) ID(DC) ±65 A
Drain Current Note1 ID(pulse) ±200 A
Total Power Dissipation(TC = 25°C) PT 100 W
Total Power Dissipation(TA = 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Single Avalanche Current Note2 IAS -45 A
Single Avalanche Energy Note2 EAS 203 mJ



Notes 1. PW 10 s, Duty Cycle 1 %
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 , VGS = −20 0 V




Description

The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications.


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