Position: Home  > All Categories> Integrated Circuits (ICs) > 2SJ605

2SJ605

Features: • Super low on-state resistance:RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 33 A)RDS(on)2 = 31 m MAX. (VGS = 4.0 V, ID = 33 A)• Low input capacitanceCiss = 4600 pF TYP. (VDS = 10 V, VGS = 0 A)• Built-in gate protection diodeSpecifications Parameter Symbol Ratings Uni...

product image

2SJ605 Picture
See larger image
SeekIC No. : 004225326 Detail

2SJ605: Features: • Super low on-state resistance:RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 33 A)RDS(on)2 = 31 m MAX. (VGS = 4.0 V, ID = 33 A)• Low input capacitanceCiss = 4600 pF TYP. (VDS = 10 V,...

2SJ605 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
2SJ605
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Super low on-state resistance:
RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 33 A)
RDS(on)2 = 31 m MAX. (VGS = 4.0 V, ID = 33 A)
• Low input capacitance
Ciss = 4600 pF TYP. (VDS = 10 V, VGS = 0 A)
• Built-in gate protection diode


Specifications

Parameter Symbol Ratings Unit
Drain to Source Voltage(VGS = 0 V) VDSS 60 V
Gate to Source Voltage(VDS = 0 V) VGSS ±20 V
Drain Current (TC = 25°C) ID(DC) ±65 A
Drain Current Note1 ID(pulse) ±200 A
Total Power Dissipation(TC = 25°C) PT 100 W
Total Power Dissipation(TA = 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Single Avalanche Current Note2 IAS -45 A
Single Avalanche Energy Note2 EAS 203 mJ



Notes 1. PW 10 s, Duty Cycle 1 %
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 , VGS = −20 0 V




Description

The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Cable Assemblies
CS1W-CN114
XW2Z-500T
Tapes, Adhesives
803
AC452-2
Cables, Wires
821-0814-a
415-0100-150
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Circuit Protection
A50QS75-4Y
F-17*77
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
View more