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2SJ599

Features: • Low on-state resistance: R DS(on)1 = 75 m MAX. (VGS = 10 V, ID = 10 A) R DS(on)2 = 111 m MAX. (VGS = 4.0 V, ID = 10 A)• Low Ciss: Ciss = 1300 pF TYP.• Built-in gate protection diode• TO-251/TO-252 packageSpecifications Item Symbol Ratings Unit ...

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SeekIC No. : 004225320 Detail

2SJ599: Features: • Low on-state resistance: R DS(on)1 = 75 m MAX. (VGS = 10 V, ID = 10 A) R DS(on)2 = 111 m MAX. (VGS = 4.0 V, ID = 10 A)• Low Ciss: Ciss = 1300 pF TYP.• Built-in gate pro...

2SJ599 Data Sheet

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Part Number:
2SJ599
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Low on-state resistance:
    R DS(on)1 = 75 m MAX. (VGS = 10 V, ID = 10 A)
    R DS(on)2 = 111 m MAX. (VGS = 4.0 V, ID = 10 A)
• Low Ciss: Ciss = 1300 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package


Specifications

Item
Symbol
Ratings
Unit
Drain to source voltage(VGS = 0 V)
VDSS
-60
V
Gate to source voltage(VDS = 0 V)
VGSS
±20
V
Drain current(DC) (TC = 25°C)
ID(DC)
±20
A
Drain current(pulse) Note1
ID(pulse)
±50
A
Total Power Dissipation (TC = 25°C)
PT
35
W
Total Power Dissipation (TA = 25°C)
PT
1.0
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
55 to +150
Single Avalanche Current Note2
IAS
-20
A
Single Avalanche Energy Note2
EAS
40
mJ



Description

The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.


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