Features: ` Low on-resistance RDS =2.8 typ. (VGS = -10 V , ID = -50 mA) RDS =5.7 typ. (VGS = -4 V , ID = -50 mA)` 4 V gate drive device.Specifications Item Symbol Ratings Unit Drain to source voltage VDSS -30 V Gate to source voltage VGSS ±20 V Drain cu...
2SJ588: Features: ` Low on-resistance RDS =2.8 typ. (VGS = -10 V , ID = -50 mA) RDS =5.7 typ. (VGS = -4 V , ID = -50 mA)` 4 V gate drive device.Specifications Item Symbol Ratings Unit D...
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Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
-30 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
-100 |
mA |
Drain peak current |
ID(pulse)Note1 |
-400 |
mA |
Body-drain diode reverse drain current |
IDR |
-100 |
mA |
Channel dissipation |
Pch |
300 |
mW |
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
55 to +150 |