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2SJ587

Features: ` Low on-resistanceRDS = 8.5 typ. (VGS = -4 V , ID = -25 mA)RDS = 15 typ. (VGS = -2.5 V , ID = -10 mA)` 2.5 V gate drive device.` Small package (SMPAK)Specifications Parameter Symbol Rating Unit Drain to source voltageGate to source voltageDrain currentDrain peak curr...

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2SJ587: Features: ` Low on-resistanceRDS = 8.5 typ. (VGS = -4 V , ID = -25 mA)RDS = 15 typ. (VGS = -2.5 V , ID = -10 mA)` 2.5 V gate drive device.` Small package (SMPAK)Specifications Parameter S...

2SJ587 Data Sheet

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Part Number:
2SJ587
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`  Low on-resistance
RDS = 8.5 typ. (VGS = -4 V , ID = -25 mA)
RDS = 15 typ. (VGS = -2.5 V , ID = -10 mA)
`  2.5 V gate drive device.
`  Small package (SMPAK)


Specifications

Parameter
Symbol
Rating
Unit
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
VDSS
VGSS
ID
ID(pulse)
IDR
Pch
Tch
Tstg
-20
±10
-50
-200
-50
100
150
55 to +150
V
V
mA
mA
mA
mW

Note: 1. PW 10 ms, duty cycle 1%
2. Value on the alumina ceramic board (12.5x 20 x0.7 mm)


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