Features: · Low on-resistanceRDS =2.8 W typ. (VGS = -10 V , ID = -50 mA)RDS =5.7 W typ. (VGS = -4 V , ID = -50 mA)· 4 V gate drive device.· Small package (CMPAK)Specifications Parameter Symbol Ratings Unit Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS ±20 V D...
2SJ576: Features: · Low on-resistanceRDS =2.8 W typ. (VGS = -10 V , ID = -50 mA)RDS =5.7 W typ. (VGS = -4 V , ID = -50 mA)· 4 V gate drive device.· Small package (CMPAK)Specifications Parameter Symbol...
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Parameter | Symbol | Ratings | Unit |
Drain to Source Voltage | VDSS | 30 | V |
Gate to Source Voltage | VGSS | ±20 | V |
Drain Current | ID | -400 | A |
Drain Current | ID(pulse)Note1 | -100 | A |
Body-drain diode reverse drain current | IDR | -400 | A |
Channel dissipation | PchNote2 | 300 | W |
Channel Temperature | Tch | 150 | °C |
Storage Temperature | Tstg | 55 to +150 | °C |
Note: 1. PW 10s, duty cycle 1 %
2. Value on the alumina ceramic board (12.5x20x0.7 mm)