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2SJ575

Features: · Low on-resistanceRDS =2.8 W typ. (VGS = -10 V , ID = -50 mA)RDS =5.7 W typ. (VGS = -4 V , ID = -50 mA)· 4 V gate drive device.· Small package (MPAK)Specifications Parameter Symbol Ratings Unit Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS ±20 V Dr...

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SeekIC No. : 004225300 Detail

2SJ575: Features: · Low on-resistanceRDS =2.8 W typ. (VGS = -10 V , ID = -50 mA)RDS =5.7 W typ. (VGS = -4 V , ID = -50 mA)· 4 V gate drive device.· Small package (MPAK)Specifications Parameter Symbol ...

2SJ575 Data Sheet

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Part Number:
2SJ575
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·  Low on-resistance
RDS =2.8 W typ. (VGS = -10 V , ID = -50 mA)
RDS =5.7 W typ. (VGS = -4 V , ID = -50 mA)
·  4 V gate drive device.
·  Small package (MPAK)


Specifications

Parameter Symbol Ratings Unit
Drain to Source Voltage VDSS 30 V
Gate to Source Voltage VGSS ±20 V
Drain Current ID -100 A
Drain Current ID(pulse)Note1 -400 A
Body-drain diode reverse drain current IDR -100 A
Channel dissipation PchNote2 400 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C


Note: 1. PW 10s, duty cycle 1 %
2. Value on the alumina ceramic board (12.5x20x0.7mm)




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