MOSFET P-CH 200V 2.5A PW-MOLD
2SJ567(TE16L1,NQ): MOSFET P-CH 200V 2.5A PW-MOLD
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Series: | - | Manufacturer: | Toshiba | ||
FET Type: | MOSFET P-Channel, Metal Oxide | Transistor Type: | - | ||
Current - Collector (Ic) (Max): | - | FET Feature: | Standard | ||
Drain to Source Voltage (Vdss): | 200V | Continuous Drain Current : | 15 A | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 2.5A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 1.5A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 3.5V @ 1mA | Gate Charge (Qg) @ Vgs: | 10nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 410pF @ 10V | ||
Power - Max: | 20W | Mounting Type: | Surface Mount | ||
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 | Supplier Device Package: | PW-MOLD |
Technical/Catalog Information | 2SJ567(TE16L1,NQ) |
Vendor | Toshiba |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 2.5A |
Rds On (Max) @ Id, Vgs | 2 Ohm @ 1.5A, 10V |
Input Capacitance (Ciss) @ Vds | 410pF @ 10V |
Power - Max | 20W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 10nC @ 10V |
Package / Case | 2-7J1B |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 2SJ567 TE16L1,NQ 2SJ567TE16L1,NQ |