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2SJ567(TE16L1,NQ)

MOSFET P-CH 200V 2.5A PW-MOLD

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SeekIC No. : 003434047 Detail

2SJ567(TE16L1,NQ): MOSFET P-CH 200V 2.5A PW-MOLD

2SJ567(TE16L1,NQ) Data Sheet

floor Price/Ceiling Price

US $ .31~.31 / Piece | Get Latest Price
Part Number:
2SJ567(TE16L1,NQ)
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~2000
  • Unit Price
  • $.31
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/15

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET P-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Standard
Drain to Source Voltage (Vdss): 200V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 2.5A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) @ Vgs: 10nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 410pF @ 10V
Power - Max: 20W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs: 10nC @ 10V
FET Feature: Standard
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 200V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25° C: 2.5A
Power - Max: 20W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Manufacturer: Toshiba
Supplier Device Package: PW-MOLD
Input Capacitance (Ciss) @ Vds: 410pF @ 10V
Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.5A, 10V


Parameters:

Technical/Catalog Information2SJ567(TE16L1,NQ)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C2.5A
Rds On (Max) @ Id, Vgs2 Ohm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds 410pF @ 10V
Power - Max20W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs10nC @ 10V
Package / Case2-7J1B
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SJ567 TE16L1,NQ
2SJ567TE16L1,NQ



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