Features: `Low drain-source ON resistance: RDS (ON) = 1.6 (typ.)`High forward transfer admittance: |Yfs| = 2.0 S (typ.)`Low leakage current: IDSS = −100 A (max) (VDS = −200 V)`Enhancement-model: Vth = −1.5 ~ −3.5 V (VDS = −10 V, ID = −1 mA)Specifications C...
2SJ567: Features: `Low drain-source ON resistance: RDS (ON) = 1.6 (typ.)`High forward transfer admittance: |Yfs| = 2.0 S (typ.)`Low leakage current: IDSS = −100 A (max) (VDS = −200 V)`Enhanceme...
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Characteristics | Symbol | Rating | Unit | |
Drain-source voltage | VDSS | -200 | V | |
Drain-gate voltage (RGS= 20 k) | VDGR | -200 | V | |
Gate-source voltage | VGSS | ±20 | V | |
Drain current | DC (Note 1) | ID | -2.5 | A |
Pulse (Note 1) | IDP | -10 | ||
Drain power dissipation (Tc = 25°C) | PD | 20 | W | |
Single pulse avalanche energy (Note 2) |
EAS | 97.5 | mJ | |
Avalanche current | IAR | -2.5 | A | |
Repetitive avalanche energy (Note 3) | EAR | 2.0 | mJ | |
Channel temperature | Tch | 150 | °C | |
Storage temperature range | Tstg | -55~150 | °C |