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2SJ567

Features: `Low drain-source ON resistance: RDS (ON) = 1.6 (typ.)`High forward transfer admittance: |Yfs| = 2.0 S (typ.)`Low leakage current: IDSS = −100 A (max) (VDS = −200 V)`Enhancement-model: Vth = −1.5 ~ −3.5 V (VDS = −10 V, ID = −1 mA)Specifications C...

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2SJ567: Features: `Low drain-source ON resistance: RDS (ON) = 1.6 (typ.)`High forward transfer admittance: |Yfs| = 2.0 S (typ.)`Low leakage current: IDSS = −100 A (max) (VDS = −200 V)`Enhanceme...

2SJ567 Data Sheet

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Part Number:
2SJ567
Supply Ability:
5000

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Product Details

Description



Features:

`Low drain-source ON resistance: RDS (ON) = 1.6 (typ.)
`High forward transfer admittance: |Yfs| = 2.0 S (typ.)
`Low leakage current: IDSS = −100 A (max) (VDS = −200 V)
`Enhancement-model: Vth = −1.5 ~ −3.5 V (VDS = −10 V, ID = −1 mA)


Specifications

Characteristics Symbol Rating Unit
Drain-source voltage VDSS -200 V
Drain-gate voltage (RGS= 20 k) VDGR -200 V
Gate-source voltage VGSS ±20 V
Drain current DC (Note 1) ID -2.5 A
Pulse (Note 1) IDP -10
Drain power dissipation (Tc = 25°C) PD 20 W
Single pulse avalanche energy
(Note 2)		 EAS 97.5 mJ
Avalanche current IAR -2.5 A
Repetitive avalanche energy (Note 3) EAR 2.0 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg -55~150 °C



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