2SJ553(S)

Features: ` Low on-resistanceRDS(on) = 0.028 typ.` Low drive current.` 4V gate drive devices.` High speed switching.Specifications Parameter Symbol Ratings Unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current ID -30 A Drain Current ...

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SeekIC No. : 004225286 Detail

2SJ553(S): Features: ` Low on-resistanceRDS(on) = 0.028 typ.` Low drive current.` 4V gate drive devices.` High speed switching.Specifications Parameter Symbol Ratings Unit Drain to Source Voltage V...

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Part Number:
2SJ553(S)
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/9

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Product Details

Description



Features:

` Low on-resistance
RDS(on) = 0.028 typ.
` Low drive current.
` 4V gate drive devices.
` High speed switching.



Specifications

Parameter Symbol Ratings Unit
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current ID -30 A
Drain Current ID(pulse)Note1 -120 A
Body-drain diode reverse drain current IDR -30 A
Avalenche current IAP Note3 -30 A
Avalenche energy EARNote3 77 mJ
Channel dissipation PchNote2 75 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C


Note: 1. PW 10s, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50




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