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2SJ551(L)

Features: ` Low on-resistanceRDS(on) = 0.050 typ.` Low drive current.` 4V gate drive devices.` High speed switching.Specifications Parameter Symbol Ratings Unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current ID -18 A Drain Current ...

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2SJ551(L): Features: ` Low on-resistanceRDS(on) = 0.050 typ.` Low drive current.` 4V gate drive devices.` High speed switching.Specifications Parameter Symbol Ratings Unit Drain to Source Voltage V...

2SJ551(L) Data Sheet

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Part Number:
2SJ551(L)
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Features:

` Low on-resistance
RDS(on) = 0.050 typ.
` Low drive current.
` 4V gate drive devices.
` High speed switching.


Specifications

Parameter Symbol Ratings Unit
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current ID -18 A
Drain Current ID(pulse)Note1 -72 A
Body-drain diode reverse drain current IDR -18 A
Avalenche current IAP Note3 -18 A
Avalenche energy EARNote3 27 mJ
Channel dissipation PchNote2 30 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C


Note: 1. PW 10s, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50




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