Features: • Low on-resistance RDS (on) = 0.050 typ.• Low drive current.• 4 V gate drive devices.• High speed switching.Specifications Parameter Symbol Ratings UNIT Drain to Source Voltage VDSS -60 V Gate to Source Voltage VGSS ±20 V Drain Current ...
2SJ551: Features: • Low on-resistance RDS (on) = 0.050 typ.• Low drive current.• 4 V gate drive devices.• High speed switching.Specifications Parameter Symbol Ratings UNIT ...
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Parameter | Symbol | Ratings | UNIT |
Drain to Source Voltage | VDSS | -60 | V |
Gate to Source Voltage | VGSS | ±20 | V |
Drain Current | ID | -18 | A |
Drain Current (Pulse) | ID(pulse) Note 1 |
-72 | A |
Body-drain diode reverse drain current | IDR | -18 | A |
Avalanche current | IAPNote3 | -18 | A |
Avalanche energy | EarNote3 | 27 | mJ |
Channel dissipation | PchNote 2 | 60 | W |
Channel Temperature | Tch | 150 | |
Storage Temperature | Tstg | 55 to +150 |