Features: ` Low on-resistance RDS (on) = 0.11 typ.` Low drive current` 4 V gate drive devices` High speed switchingSpecifications Parameter Symbol Ratings UNIT Drain to Source Voltage VDSS -60 V Gate to Source Voltage VGSS ±20 V Drain Current ID -12 A Drain Current...
2SJ549: Features: ` Low on-resistance RDS (on) = 0.11 typ.` Low drive current` 4 V gate drive devices` High speed switchingSpecifications Parameter Symbol Ratings UNIT Drain to Source Voltage ...
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Parameter | Symbol | Ratings | UNIT |
Drain to Source Voltage | VDSS | -60 | V |
Gate to Source Voltage | VGSS | ±20 | V |
Drain Current | ID | -12 | A |
Drain Current (Pulse) | ID(pulse) Note 1 |
-48 | A |
Body-drain diode reverse drain current | IDR | -12 | A |
Avalanche current | IAPNote3 | -12 | A |
Avalanche energy | EarNote3 | 12 | mJ |
Channel dissipation | PchNote 2 | 50 | W |
Channel Temperature | Tch | 150 | |
Storage Temperature | Tstg | 55 to +150 |