2SJ539

Features: · Low on-resistanceRDS(on) = 0.16 W typ.· Low drive current· 4 V gete drive devices· High speed switchingSpecifications Parameter Symbol Ratings Unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current ID -10 A Drain Current I...

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2SJ539 Picture
SeekIC No. : 004225262 Detail

2SJ539: Features: · Low on-resistanceRDS(on) = 0.16 W typ.· Low drive current· 4 V gete drive devices· High speed switchingSpecifications Parameter Symbol Ratings Unit Drain to Source Voltage VD...

floor Price/Ceiling Price

Part Number:
2SJ539
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

·  Low on-resistance
RDS(on) = 0.16 W typ.
·  Low drive current
·  4 V gete drive devices
·  High speed switching



Specifications

Parameter Symbol Ratings Unit
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current ID -10 A
Drain Current ID(pulse)Note1 -40 A
Body-drain diode reverse drain current IDR -10 A
Avalenche current IAP Note3 -10 A
Avalenche energy EARNote3 8.5 mJ
Channel dissipation PchNote2 40 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C


Note: 1. PW 10s, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50




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