Features: · Low on-resistanceRDS(on) = 0.16 W typ.· Low drive current· 4 V gete drive devices· High speed switchingSpecifications Parameter Symbol Ratings Unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current ID -10 A Drain Current I...
2SJ539: Features: · Low on-resistanceRDS(on) = 0.16 W typ.· Low drive current· 4 V gete drive devices· High speed switchingSpecifications Parameter Symbol Ratings Unit Drain to Source Voltage VD...
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Parameter | Symbol | Ratings | Unit |
Drain to Source Voltage | VDSS | 60 | V |
Gate to Source Voltage | VGSS | ±20 | V |
Drain Current | ID | -10 | A |
Drain Current | ID(pulse)Note1 | -40 | A |
Body-drain diode reverse drain current | IDR | -10 | A |
Avalenche current | IAP Note3 | -10 | A |
Avalenche energy | EARNote3 | 8.5 | mJ |
Channel dissipation | PchNote2 | 40 | W |
Channel Temperature | Tch | 150 | °C |
Storage Temperature | Tstg | 55 to +150 | °C |
Note: 1. PW 10s, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50