2SJ537 Selling Leads, Price trend, 2SJ537 DataSheet download, circuit diagram from SeekIC.com

Features: 􀁺 •Low drain−source ON resistance : RDS (ON) = 0.16 (typ.)􀁺 •High forward transfer admittance : |Yfs| = 3.5 S (typ.)􀁺 •Low leakage current : IDSS = −100 A (VDS = −50 V)􀁺 •Enhancement−mode : Vth = −...

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SeekIC No. : 004225260 Detail

2SJ537: Features: 􀁺 •Low drain−source ON resistance : RDS (ON) = 0.16 (typ.)􀁺 •High forward transfer admittance : |Yfs| = 3.5 S (typ.)􀁺 •Low leakage curre...

2SJ537 Data Sheet

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Part Number:: 2SJ537
Supply Ability:: 5000

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Upload time: 2024/12/30

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Product Details

Description

Features:

􀁺 •Low drain−source ON resistance : R_{DS (ON)} = 0.16 (typ.)
􀁺 •High forward transfer admittance : |Y_fs| = 3.5 S (typ.)
􀁺 •Low leakage current : I_DSS = −100 A (V_DS = −50 V)
􀁺 •Enhancement−mode : V_th = −0.8~−2.0 V (V_DS = −10 V, I_D = −1 mA)

Specifications

Item		Symbol	Ratings	Unit
Drain-Source Voltage		VDSS	-50	V
Drain−gate voltage (RGS = 20 k)		VDGR	−50	V
Gate-Source Voltage		VGSS	±20	V
Drain Current	DC (Note 1)	ID IDP	-5 -15	A
	Pulse (Note 1)
Drain power dissipation		PD	0.9	W
Channel Temperature		Tch	150
Storage Temperature		Tstg	-55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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2SJ537

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