Features: ·Low on-resistance·RDS(on) = 0.028W typ.·Low drive current.·4V gate drive devices.·High speed switching.Specifications Parameter Symbol Ratings Unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current ID -30 A Drain Current ID...
2SJ535: Features: ·Low on-resistance·RDS(on) = 0.028W typ.·Low drive current.·4V gate drive devices.·High speed switching.Specifications Parameter Symbol Ratings Unit Drain to Source Voltage VDS...
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Parameter | Symbol | Ratings | Unit |
Drain to Source Voltage | VDSS | 60 | V |
Gate to Source Voltage | VGSS | ±20 | V |
Drain Current | ID | -30 | A |
Drain Current | ID(pulse)Note1 | -120 | A |
Body-drain diode reverse drain current | IDR | -30 | A |
Avalenche current | IAP Note3 | -30 | A |
Avalenche energy | EARNote3 | 77 | mJ |
Channel dissipation | PchNote2 | 35 | W |
Channel Temperature | Tch | 150 | °C |
Storage Temperature | Tstg | 55 to +150 | °C |
Note: 1. PW 10s, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50