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2SJ533

Features: · Low on-resistance RDS(on) = 0.028W typ.· Low drive current.· 4V gate drive devices.· High speed switching.Specifications Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 30 A Drain peak current I...

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SeekIC No. : 004225257 Detail

2SJ533: Features: · Low on-resistance RDS(on) = 0.028W typ.· Low drive current.· 4V gate drive devices.· High speed switching.Specifications Item Symbol Ratings Unit Drain to source voltage VDSS...

2SJ533 Data Sheet

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Part Number:
2SJ533
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·  Low on-resistance RDS(on) = 0.028W typ.
·  Low drive current.
·  4V gate drive devices.
·  High speed switching.


Specifications

Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID 30 A
Drain peak current ID(pulse) Note1 120 A
Drain peak current IDR 30 A
Avalanche current IAP Note3 30 A
Avalanche energy EAR Note3 77 mJ
Channel dissipation Pch Note2 35 W
Channel temperature Tch 150 °C
Storage temperature Tstg 55 to +150 °C

Note: 1. PW 10ms, duty cycle 1 %
          2. Value at Tc = 25°C
          3. Value at Tch = 25°C, Rg 50


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