Features: · Low on-resistanceRDS(on) = 0.08W typ.· 4V gate drive devices.· High speed switching.Specifications Parameter Symbol Ratings Unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current ID -15 A Drain Current ID(pulse)Note1 -60 ...
2SJ530(L): Features: · Low on-resistanceRDS(on) = 0.08W typ.· 4V gate drive devices.· High speed switching.Specifications Parameter Symbol Ratings Unit Drain to Source Voltage VDSS 60 V Gate t...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter | Symbol | Ratings | Unit |
Drain to Source Voltage | VDSS | 60 | V |
Gate to Source Voltage | VGSS | ±20 | V |
Drain Current | ID | -15 | A |
Drain Current | ID(pulse)Note1 | -60 | A |
Body-drain diode reverse drain current | IDR | -15 | A |
Avalenche current | IAP Note3 | -15 | A |
Avalenche energy | EARNote3 | 19 | mJ |
Channel dissipation | PchNote2 | 30 | W |
Channel Temperature | Tch | 150 | °C |
Storage Temperature | Tstg | 55 to +150 | °C |
Note: 1. PW 10s, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50