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Features: · Low on-resistance RDS(on) = 0.17 W typ.· 4 V gete drive devices· High speed switchingSpecifications Parameter Symbol Ratings Unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current ID -7 A Drain Current ID(pulse)Note1 -28 ...

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2SJ528(S): Features: · Low on-resistance RDS(on) = 0.17 W typ.· 4 V gete drive devices· High speed switchingSpecifications Parameter Symbol Ratings Unit Drain to Source Voltage VDSS 60 V Gate ...

2SJ528(S) Data Sheet

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Part Number:: 2SJ528(S)
Supply Ability:: 5000

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Upload time: 2024/11/24

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Product Details

Description

Features:

· Low on-resistance R_DS(on) = 0.17 W typ.
· 4 V gete drive devices
· High speed switching

Specifications

Parameter	Symbol	Ratings	Unit
Drain to Source Voltage	V_DSS	60	V
Gate to Source Voltage	V_GSS	±20	V
Drain Current	I_D	-7	A
Drain Current	I_D(pulse)^Note1	-28	A
Body-drain diode reverse drain current	I_DR	-7	A
Avalenche current	I_AP ^Note3	-7	A
Avalenche energy	E_AR^Note3	4.2	mJ
Channel dissipation	Pch^Note2	20	W
Channel Temperature	T_ch	150	°C
Storage Temperature	T_stg	55 to +150	°C

Note: 1. PW 10ms, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50

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2SJ528(S)

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