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2SJ527(S)

Features: ` Low on-resistanceRDS(on) = 0.3 typ.` Low drive current` 4 V gete drive devices` High speed switchingSpecifications Parameter Symbol Ratings Unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current ID -5 A Drain Current ID(pu...

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2SJ527(S): Features: ` Low on-resistanceRDS(on) = 0.3 typ.` Low drive current` 4 V gete drive devices` High speed switchingSpecifications Parameter Symbol Ratings Unit Drain to Source Voltage VDSS ...

2SJ527(S) Data Sheet

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Part Number:
2SJ527(S)
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Product Details

Description



Features:

`  Low on-resistance
RDS(on) = 0.3  typ.
`  Low drive current
`  4 V gete drive devices
`  High speed switching


Specifications

Parameter Symbol Ratings Unit
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current ID -5 A
Drain Current ID(pulse)Note1 -20 A
Body-drain diode reverse drain current IDR -5 A
Avalenche current IAP Note3 -5 A
Avalenche energy EARNote3 2.1 mJ
Channel dissipation PchNote2 20 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C


Note: 1. PW  10ms, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg  50




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