Features: • Low on-resistance RDS (on) = 0.3 typ.• Low drive current• 4 V gate drive devices• High speed switchingSpecifications Parameter Symbol Ratings UNIT Drain to Source Voltage VDSS -60 V Gate to Source Voltage VGSS ±30 V Drain Current ID ...
2SJ527: Features: • Low on-resistance RDS (on) = 0.3 typ.• Low drive current• 4 V gate drive devices• High speed switchingSpecifications Parameter Symbol Ratings UNIT Dra...
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Parameter | Symbol | Ratings | UNIT |
Drain to Source Voltage | VDSS | -60 | V |
Gate to Source Voltage | VGSS | ±30 | V |
Drain Current | ID | -5 | A |
Drain Current (Pulse) | ID(pulse) Note 1 |
-20 | A |
Body-drain diode reverse drain current | IDR | -5 | A |
Avalanche current | IAPNote3 | -5 | A |
Avalanche energy | EarNote3 | 2.1 | |
Channel dissipation | PchNote 2 | 20 | W |
Channel Temperature | Tch | 150 | |
Storage Temperature | Tstg | 55 to +150 |
2SJ527 is a High speed power switching