2SJ525

Features: `4-V gate drive`Low drain−source ON resistance : RDS (ON) = 0.1 (typ.)`High forward transfer admittance : |Yfs| = 4.5 S (typ.)`Low leakage current : IDSS = −100 A (max) (VDS = −30 V)`Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)...

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SeekIC No. : 004225236 Detail

2SJ525: Features: `4-V gate drive`Low drain−source ON resistance : RDS (ON) = 0.1 (typ.)`High forward transfer admittance : |Yfs| = 4.5 S (typ.)`Low leakage current : IDSS = −100 A (max) (VDS =...

floor Price/Ceiling Price

Part Number:
2SJ525
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/21

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Product Details

Description



Features:

`4-V gate drive
`Low drain−source ON resistance : RDS (ON) = 0.1 (typ.)
`High forward transfer admittance : |Yfs| = 4.5 S (typ.)
`Low leakage current : IDSS = −100 A (max) (VDS = −30 V)
`Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)



Specifications

Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
-30
V
Drain−gate voltage (RGS = 20 k)
VDGR
-30
V
Gate−source voltage
VGSS
±20
V
Drain current
ID
-5
A
IDP
-20
A
Drain power dissipation (Ta = 25)
PD
1.3
W
Single pulse avalanche energy
EAS
517
mJ
Avalanche current
IAR
-5
A
Repetitive avalanche energy
EAR
0.13
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
−55~150



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