Features: `4-V gate drive`Low drain−source ON resistance : RDS (ON) = 0.1 (typ.)`High forward transfer admittance : |Yfs| = 4.5 S (typ.)`Low leakage current : IDSS = −100 A (max) (VDS = −30 V)`Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)...
2SJ525: Features: `4-V gate drive`Low drain−source ON resistance : RDS (ON) = 0.1 (typ.)`High forward transfer admittance : |Yfs| = 4.5 S (typ.)`Low leakage current : IDSS = −100 A (max) (VDS =...
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Characteristics |
Symbol |
Rating |
Unit |
Drain−source voltage |
VDSS |
-30 |
V |
Drain−gate voltage (RGS = 20 k) |
VDGR |
-30 |
V |
Gate−source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
-5 |
A |
IDP |
-20 |
A | |
Drain power dissipation (Ta = 25) |
PD |
1.3 |
W |
Single pulse avalanche energy |
EAS |
517 |
mJ |
Avalanche current |
IAR |
-5 |
A |
Repetitive avalanche energy |
EAR |
0.13 |
mJ |
Channel temperature |
Tch |
150 |
|
Storage temperature range |
Tstg |
−55~150 |