2SJ518

The 2SJ518 is designed as silicon P channel MOSFET for high speed power switching.

2SJ518 has four features. (1)Low on-resistance which means Rds=0.35 typ at Vgs=-10V and Id=-1A. (2)High speed switching. (3)4V gate drive devices. (4)Low drive current. Those are all the main features.

Some absolute maximum ratings of 2SJ518 have been concluded into several points as follow. (1)Its drain to source voltage would be -60V. (2)Its gate to source voltage would be +/-20V. (3)Its drain current would be -2A. (4)Its drain peak current would be -4A. (5)Its body-drain diode reverse drain current would be -2A. (6)Its avalanche current would be -2A. (7)Its avalanche energy would be 0.34mJ. (8)Its channel dissipation would be 1W. (9)Its channel temperature would be 150°C. (10)Its storage temperature range would be from -55°C to +150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2SJ518 are concluded as follow. (1)Its drain to source breakdown voltage would be min -60V. (2)Its gate to source breakdown voltage would be min +/-20V. (3)Its gate to source leak current would be max +/-10uA. (4)Its zero gate voltage drain current would be max -10uA. (5)Its static drain to source on state would be typ 0.35 and max 0.46. (6)Its gate to source cutoff voltage would be min -1.0V and max -2.0V. (7)Its forward transfer admittance would be min 1.2S and typ 2S. (8)Its input capacitance would be typ 220pF. (9)Its output capacitance would be 110pF. (10)Its reverse transfer capacitance would be typ 35pF. (11)Its turn-on time would be typ 10ns. (12)Its rise time would be typ 11ns. (13)Its turn-off delay time would be typ 45ns. (14)Its fall time would be typ 30ns. (15)Its body-drain diode forward voltage would be typ -1.05V. (16)Its body-drain diode reverse recovery time would be typ 50ns. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!