Features: ` Low on-resistance RDS(on) = 0.18 typ. (at VGS =4V, ID =1A)` Low drive current` High speed switching` 2.5V gate drive devicesSpecifications Item Symbol Rating Unit Drain to source voltage VDSS -20 V Gate to source voltage VGSS ±10 V Drain curr...
2SJ517: Features: ` Low on-resistance RDS(on) = 0.18 typ. (at VGS =4V, ID =1A)` Low drive current` High speed switching` 2.5V gate drive devicesSpecifications Item Symbol Rating Unit Dra...
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Item |
Symbol |
Rating |
Unit |
Drain to source voltage |
VDSS |
-20 |
V |
Gate to source voltage |
VGSS |
±10 |
V |
Drain current |
ID |
-2 |
A |
Drain peak current |
ID(pulse)1 |
-4 |
A |
Body-drain diode reverse drain current |
IDR |
-2 |
A |
Channel dissipation |
Pch2 |
1 |
W |
Channel temperature |
Tch |
150 |
°C |
Storage temperature |
Tstg |
-55to+150 |
°C |