2SJ516(F)

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 6.5A
Drain to Source Voltage (Vdss): 250V
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 29nC @ 10V
Power - Max: 35W
Package / Case: TO-220-3 Full Pack
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Manufacturer: Toshiba
Supplier Device Package: TO-220NIS
Rds On (Max) @ Id, Vgs: 800 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds: 1120pF @ 10V


Parameters:

Technical/Catalog Information	2SJ516(F)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	6.5A
Rds On (Max) @ Id, Vgs	800 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds	1120pF @ 10V
Power - Max	35W
Packaging	Tube
Gate Charge (Qg) @ Vgs	29nC @ 10V
Package / Case	2-10R1B
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SJ516 F 2SJ516F