2SJ511

The 2SJ511 is a kind of P-channel MOS field effect transistor.It can be used for high speed,high current switching and chopper regulator,DC-DC converter and motor drive applications.It has some features as follows.(1) 4 V gate drive; (2) low drain-source on-resistance; (3)high forward transfer admittance; (4) low leakage current; (5) enhancement-mode.

The following is absolute maximum ratings of 2SJ511 at TA is 25. (1): drain-source voltage(VDSS) is -30 V; (2): gate-source voltage(VGSS) is ±20 V; (3): drain-gate voltage(VDGR) is -30 V; (4): DC drain current(ID) is -2 A and pulse drain current is -6 A; (5): drain power dissipation(PD) is 1.5 W ; (6): single pulse avalanche energy(EAS) is 55 mJ; (7): avalanche current(IAR) is -2 A; (8): repetitive avalanche energy(EAR) is 0.15 mJ; (9): channel temperature (TCH) is 150; (10): storage temperature range is from -55 to 150.

What comes next is the electrical characters of 2SJ511 at TA is 25. (1): the maximum gate leakage current is ±10 A when VDS is 0 and VGS is ±16 V; (2): the minimum drain-source breakdown voltage is -30 V at ID is -10 mA and VGS is 0 V; (3): the minimum gate threshold voltage is -0.8 V and is -2.0 V for the maximum at VDS is -10 V and ID is -1 mA; (4): the typical input capacitance is 160 pF,the reverse transfer capacitance is 30 pF and the output capacitance is 85 pF when VDS is -10 V,VGS is 0 V and f is 1 MHz; (5): the typical gate-source charge is 4.3 nC and gate-drain charge is 1.2 nC when VDD is -24 V,VGS is -10 V and ID is -2 A.