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2SJ508

Features: ` 4-V gate drive` Low drain−source ON resistance : R DS (ON) = 1.34 (typ.)` High forward transfer admittance : |Yfs| = 0.7 S (typ.)` Low leakage current : IDSS = −100 A(max) (VDS = −100 V)` Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = ͨ...

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2SJ508: Features: ` 4-V gate drive` Low drain−source ON resistance : R DS (ON) = 1.34 (typ.)` High forward transfer admittance : |Yfs| = 0.7 S (typ.)` Low leakage current : IDSS = −100 A(max) (...

2SJ508 Data Sheet

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Part Number:
2SJ508
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

` 4-V gate drive
` Low drain−source ON resistance : R DS (ON) = 1.34 (typ.)
` High forward transfer admittance : |Yfs| = 0.7 S (typ.)
` Low leakage current : IDSS = −100 A(max) (VDS = −100 V)
` Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)


Specifications

Parameter Symbol Value Unit
Drain-source (GND) voltage (1) VDSS -100 V
Drain-Source Voltage VDGR -100 V
Gate-Source Voltage VGSS ±30 V
Drain current DC (Note 1) ID -1 A
Pulse (Note 1) IDP -3
Power Dissipation PD 0.5 W
Power Dissipation(Note 2) PD 1.5 W
Single pulsed avalanche energy (Note 3) Eas 136.5 mJ
Avalanche current Iar -1 A
Repetitive avalanche energy (Note 4) Ear 0.05 mJ
Operating Temperature TCH 150
Storage Temperature Tstg -55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm * 25.4 mm * 0.8 mm)
Note 3: VDD = −50 V, Tch = 25°C (initial), L = 168 mH, RG = 25 , IAR = −1 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature


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