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2SJ507

Application`4-V gate drive`Low drain−source ON resistance : RDS (ON) = 0.5 (typ.)`High forward transfer admittance : |Yfs| = 1.0 S (typ.)`Low leakage current : IDSS = −100 A (max) (VDS = −60 V)`Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA...

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SeekIC No. : 004225226 Detail

2SJ507: Application`4-V gate drive`Low drain−source ON resistance : RDS (ON) = 0.5 (typ.)`High forward transfer admittance : |Yfs| = 1.0 S (typ.)`Low leakage current : IDSS = −100 A (max) (VDS ...

2SJ507 Data Sheet

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Part Number:
2SJ507
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

`4-V gate drive
`Low drain−source ON resistance : RDS (ON) = 0.5 (typ.)
`High forward transfer admittance : |Yfs| = 1.0 S (typ.)
`Low leakage current : IDSS = −100 A (max) (VDS = −60 V)
`Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)


Specifications

Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
−60
V
Drain−gate voltage (RGS = 20 k)
VDGR
−60
V
Gate−source voltage
VGSS
±20
V
Drain current
DC (Note 1)
ID
−1
A
Pulse (Note 1)
IDP
−3
A
Drain power dissipation
PD
0.9
W
Single pulse avalanche energy
(Note 2)
EAS
249.6
mJ
Avalanche current
IAR
−1
A
Repetitive avalanche energy (Note 3)
EAR
0.09
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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