2SJ506(L)

      2SJ506(L) is a kind of silicon P channel MOS FET high speed power switching. And it has four unique features: The first one is low on-resistance. The second one is high speed switching. The third one is low drive current . The forth one is 4 V gate drive devices.
     There are some absolute maximum ratings about 2SJ506(L). Drain to source voltage(V_DSS) is -30 V. Gate to souce voltage (V_GSS) is ±20 V. Drain current (I_D) is -10A. Drain peak current(I_D(pulse) ) is -40 A. Body to drain diode reverse drain current(IDR) is -10 A. Channel dissipation(Pch) is 20W.Channel temperature(Tch) is 150. Storage temperature(Tstg) is -55 to +150. Otherwise, there are also some electrical characterostocs about it. Drain to source breakdown voltage(V_(BR)DSS ) is -30 V min when I_D is -10 mA and V_GS is 0. Gate to source breakdown voltage(V_(BR)GSS) is ±20V min when IG is ±100 A and VGs is 0.Gate to source leak current (I_GSS) is ±10 A max when VGS is±16 V, VDS is 0.Zero gate voltage drain current(I_DSS) is10 A max when V_DS is30 V, VGS is 0.Gate to source cutoff voltage (V_{GS (off)} ) is1.0 V min and2.0 V max when I_D is 1 mA, V_DS is 10 V.Static drain to source on state resistance (R_{DS (on)} ) is 65 mtyp and 85 m max when I_D is5 A, VGS is10 V .Forward transfer admittance (|yfs|) is 10 S min and 16  S when ID is 5 A, V_DS is 10 V.Input capacitance(Ciss)is 660 pF typ when V_DS is 10 V, V_GS is 0 and f is 1 MHz.Output capacitance (Coss) is 440 pF typ when V_DS is 10 V, V_GS is 0 and f is 1 MHz.Reverse transfer capacitance (Crss) is  140 pF typ when V_DS is 10 V, V_GS is 0 and f is 1 MHz.Turn-on delay time (t_{d (on)} ) is 12  ns when I_D is 5 A, V_GS is 10 V and RL is 2 .Rise time (tr) is  65 ns when ID is 5 A, V_GS is 10 V and RL is 2 .Turn-off delay time (td _(off) ) is 85 ns when ID is 5 A, V_GS is 10 V and RL is 2 . Fall time ( tf) is 65  ns when ID is 5 A, V_GS is 10 V and RL is 2 .Body to drain diode forward voltage V_{DF( tf)} is  1.05 V typ when IF is 10 A, VGS is 0.Body to drain diode reverse recovery time ( t_rr) is 65  ns when I_F is 10 A, VGS is 0.
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