Features: Low on-resistanceRDS(on) = 0.017 typ.Low drive current.4V gate drive devices.High speed switching.PinoutSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 50 A Drain peak current ID(pu...
2SJ505(L): Features: Low on-resistanceRDS(on) = 0.017 typ.Low drive current.4V gate drive devices.High speed switching.PinoutSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 60...
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Item | Symbol | Ratings | Unit |
Drain to source voltage | VDSS | 60 | V |
Gate to source voltage | VGSS | ±20 | V |
Drain current | ID | 50 | A |
Drain peak current | ID(pulse)*1 | 200 | A |
Body to drain diode reverse drain current | IDR | 50 | A |
Avalanche current | IAP*3 | 50 | A |
Avalanche energy | EAR*3 | 214 | mJ |
Channel dissipation | Pch*2 | 75 | W |
Channel temperature | Tch | 150 | °C |
Storage temperature | T stg | -55 ~ +150 | °C |