Features: · Low on-resistance RDS(on) = 0.042W typ.· Low drive current.· 4V gate drive devices.· High speed switching.Specifications Rating Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID...
2SJ504: Features: · Low on-resistance RDS(on) = 0.042W typ.· Low drive current.· 4V gate drive devices.· High speed switching.Specifications Rating Symbol Ratings Unit Drain to source v...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Rating |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
60 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
20 |
A |
Drain peak current |
I D(pulse) *1 |
80 |
A |
Body to drain diode reverse drain current |
IDR |
20 |
A |
Avalanche current |
IAP*3 |
20 |
mJ |
Channel dissipation |
Pch*2 |
30 |
W |
Channel temperature |
Tch |
150 |
°C |
Storage temperature |
Tstg |
55 to +150 |
°C |