2SJ504 Selling Leads, Price trend, 2SJ504 DataSheet download, circuit diagram from SeekIC.com

Features: · Low on-resistance RDS(on) = 0.042W typ.· Low drive current.· 4V gate drive devices.· High speed switching.Specifications Rating Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID...

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SeekIC No. : 004225218 Detail

2SJ504: Features: · Low on-resistance RDS(on) = 0.042W typ.· Low drive current.· 4V gate drive devices.· High speed switching.Specifications Rating Symbol Ratings Unit Drain to source v...

2SJ504 Data Sheet

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Part Number:: 2SJ504
Supply Ability:: 5000

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Upload time: 2024/12/30

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2SJ501 evaluate
Features: Low ON-resistance.Ultrahigh-speed switching.2.5V drive.DescriptionThe The 2SJ501 is a p-...
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DescriptionThe The 2SJ502 is a p-channel silicon mosfet.It is ultrahigh speed switching applicatio...
2SJ503 evaluate
Features: Low ON resistance.Ultrahigh-speed switching.4V drive.DescriptionThe 2SJ503 is a p-channe...

Product Details

Description

Features:

· Low on-resistance RDS(on) = 0.042W typ.
· Low drive current.
· 4V gate drive devices.
· High speed switching.

Specifications

TR> TR>

Rating	Symbol	Ratings	Unit
Drain to source voltage	V_DSS	60	V
Gate to source voltage	V_GSS	±20	V
Drain current	I_D	20	A
Drain peak current	I _D(pulse) ^*1	80	A
Body to drain diode reverse drain current	I_DR	20	A
Avalanche current	IAP^*3	20	mJ
Channel dissipation	Pch^*2	30	W
Channel temperature	Tch	150	°C
Storage temperature	Tstg	55 to +150	°C

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2SJ504

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