Features: · Low on-resistance· Low drive current· 2.5 V Gate drive device can be driven from 3 V Source· Suitable for Switching regulator, DC - DC converterApplication· High speed power switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 20 V...
2SJ387(L): Features: · Low on-resistance· Low drive current· 2.5 V Gate drive device can be driven from 3 V Source· Suitable for Switching regulator, DC - DC converterApplication· High speed power switchingSpe...
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Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
20 |
V |
Gate to source voltage |
VGSS |
±10 |
V |
Drain current |
ID |
10 |
A |
Drain peak current |
ID(pulse)*1 |
40 |
A |
Body to drain diode reverse drain current |
IDR |
10 |
A |
Channel dissipation |
Pch*2 |
20 |
W |
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
55 to +150 |
Notes:
1. PW £ 10 ms, duty cycle £ 1 %
2. Value at Tc = 25