Features: · Low on-resistance· High speed switching· Low drive current· 4 V gate drive device can be driven from 5 V source· Suitable for Switching regulator, DC - DC converterApplication· High speed power switchingSpecifications Item Symbol Ratings Unit Drain to source voltag...
2SJ386: Features: · Low on-resistance· High speed switching· Low drive current· 4 V gate drive device can be driven from 5 V source· Suitable for Switching regulator, DC - DC converterApplication· High spee...
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Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
30 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
3 |
A |
Drain peak current |
ID(pulse)*1 |
5 |
A |
Body to drain diode reverse drain current |
IDR |
3 |
A |
Channel dissipation |
Pch |
0.9 |
W |
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
55 to +150 |
Note: 1. PW £ 10 ms, duty cycle £ 1 %