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2SJ380

Application• 4-V gate drive• Low drain-source ON resistance: RDS (ON) = 0.15 (typ.)• High forward transfer admittance: |Yfs| = 7.7 S (typ.)• Low leakage current: IDSS = −100 A (max) (VDS = −100 V)• Enhancement mode: Vth = −0.8~−2.0 V (VDS = &#...

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SeekIC No. : 004225145 Detail

2SJ380: Application• 4-V gate drive• Low drain-source ON resistance: RDS (ON) = 0.15 (typ.)• High forward transfer admittance: |Yfs| = 7.7 S (typ.)• Low leakage current: IDSS = W...

2SJ380 Data Sheet

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Part Number:
2SJ380
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

• 4-V gate drive
• Low drain-source ON resistance: RDS (ON) = 0.15 (typ.)
• High forward transfer admittance: |Yfs| = 7.7 S (typ.)
• Low leakage current: IDSS = −100 A (max) (VDS = −100 V)
• Enhancement mode: Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)


Specifications

Characteristics Symbol Rating Unit
Drain-source voltage VDSS −100 V
Drain-gate voltage (RGS = 20 k) VDGR -100 V
Gate-source voltage VGSS ±20 V
Drain current DC (Note 1) ID -12 A
Pulse (Note 1) IDP -48
Drain power dissipation (Tc = 25) PD 35 W
Single pulse avalanche energy
(Note 2)		 EAS 312 mJ
Avalanche current IAR -12 A
Repetitive avalanche energy (Note 3) EAR 3.5 mJ
Channel temperature Tch 150  
Storage temperature range Tstg −55~150  



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