2SJ377

Application`􀁺 4 V gate drive`􀁺 Low drain−source ON-resistance : RDS (ON) = 0.16 (typ.)`􀁺 High forward transfer admittance : |Yfs| = 4.0 S (typ.)`􀁺 Low leakage current : IDSS = −100 A (max) (VDS = −60 V)`􀁺 Enhancement mode : Vth = W...

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SeekIC No. : 004225143 Detail

2SJ377: Application`􀁺 4 V gate drive`􀁺 Low drain−source ON-resistance : RDS (ON) = 0.16 (typ.)`􀁺 High forward transfer admittance : |Yfs| = 4.0 S (typ.)`􀁺 Low leak...

floor Price/Ceiling Price

Part Number:
2SJ377
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/13

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Product Details

Description



Application

`􀁺 4 V gate drive
`􀁺 Low drain−source ON-resistance : RDS (ON) = 0.16 (typ.)
`􀁺 High forward transfer admittance : |Yfs| = 4.0 S (typ.)
`􀁺 Low leakage current : IDSS = −100 A (max) (VDS = −60 V)
`􀁺 Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)





Pinout

  Connection Diagram




Specifications

Characteristic Symbol Rating Unit
Drain−source voltage VDSS -60 V
Drain−gate voltage (RGS = 20 k) VDGR -60 V
Gate−source voltage VGSS ±20 V
Drain current DC (Note 1) ID -5 A
Pulse (Note 1) IDP -20 A
Drain power dissipation (Tc = 25°C) PD 20 W
Single-pulse avalanche energy
(Note 2)
EAS 273 mJ
Avalanche current IAR -5 A
Repetitive avalanche energy (Note 3) EAR 2 mJ
Channel temperature Tch 150
Storage temperature range Tstg −55~150





Description

Features of the 2SJ377 are:(1)4 V gate drive;(2)low drain-source ON resistance:RDS(ON)=0.16(Typ.);(3)high forward transfer admittance:Yfs=4.0S(Typ.);(4)low leakage current : IDSS=-100A(Max.)(VDS=-60V);(5)enhancement mode : Vth=-0.8 to 2.0V(VDS=-10V,ID=-1mA).

The absolute maximum ratings of the 2SJ377 can be summarized as:(1):the parameter is drain-source voltage,the symbol is VDSS,the limits is -60,the unit is V;(2):the parameter is drain-gate voltage(RGS=20k),the symbol is VDGR,the limits is -60,the unit is V;(3):the parameter is gate-source voltage,the symbol is VGSS,the limits is ±20,the unit is V;(4):the parameter is drain current DC,the symbol is ID,the limits is -5,the unit is A;(5):the parameter is drain current pulsed,the symbol is IDP,the limits is -20,the unit is A;(6):the parameter is drain power dissipation(Tc=25),the symbol is PD,the limits is 20,the unit is W;(7):the parameter is single pulse avalanche energy,the symbol is EAS,the limits is 273,the unit is mJ;(8):the parameter is avalanche current,the symbol is IAR,the limits is -5,the unit is A;(9):the parameter is repetitive avalanche energy,the symbol is EAR,the limits is 2,the unit is mJ;(10):the parameter is channel temperature,the symbol is Tch,the limits is 150,the unit is ;(11):the parameter is storage temperature,the symbol is Tstg,the limits is -55 to +150,the unit is .

The thermal characteristics of the 2SJ377 can be summarized as:(1):the parameter is thermal resistance,channel to case,the symbol is Rth(ch-c),the limits is 6.25,the unit is /W;(2):the parameter is thermal resistance,channel to ambient,the symbol is Rth(ch-a),the limits is 125,the unit is /W.






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