2SJ368

The 2SJ368 is designed as one kind of 60V series power MOSFET. The absolute maximum ratings of the 2SJ365 can be summarized as:(1)storage temperature: -55 to +150 ;(2)channel temperature: 150 ;(3)drain-source voltage: -60 V;(4)gate-source voltage: +/- 20 V;(5)continuous drain current: -5 or -20 A;(6)continuous source current (DC): -5 A;(7)total power dissipation: 30 W;(8)single pulse avalanche current: -5 A.

The electrical characteristics of 2SJ368 can be summarized as:(1)drain-source breakdown voltage: -60 V;(2)zero gate voltage drain current: -100 uA;(3)forward transconductance: 2.8 to 4.0 S;(4)static drain-source on-state resistance: 0.15 to 0.25 ;(5)gate treshold voltage: -1.0 to -2.0 V;(6)source-drain diode forward voltage: -1.5 V;(7)thermal resistance: 4.16 /W;(8)gate charge characteristics: -27 nC. If you want to know more information such as the electrical characteristics about the 2SJ368, please download the datasheet in www.seekic.com or www.chinaicmart.com.