2SJ363

Features: · Low on-resistance· Low drive current· 4 V gate drive device can be driven from 5 V sourceApplicationLow frequency power switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSX -30 V Gate to source voltage VGSS ±20 V Drai...

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SeekIC No. : 004225139 Detail

2SJ363: Features: · Low on-resistance· Low drive current· 4 V gate drive device can be driven from 5 V sourceApplicationLow frequency power switchingSpecifications Item Symbol Ratings Unit ...

floor Price/Ceiling Price

Part Number:
2SJ363
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/3

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Product Details

Description



Features:

·  Low on-resistance
·  Low drive current
·  4 V gate drive device can be driven from 5 V source



Application

Low frequency power switching


Specifications

Item
Symbol
Ratings
Unit
Drain to source voltage
VDSX
-30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
-2
A
Drain peak current
ID(pulse)
-4
A
Body to drain diode reverse drain current
IDR
-2
A
Channel dissipation
Pch*2
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C
Notes: 1. PW 100 ms, duty cycle 10%
            2. Value on the alumina ceramic board (12.5´20´0.7 mm)
            3. Marking is "PY".



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