Features: · Low on-resistance· Low drive current· 4 V gate drive device can be driven from 5 V sourceApplicationLow frequency power switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSX -30 V Gate to source voltage VGSS ±20 V Drai...
2SJ363: Features: · Low on-resistance· Low drive current· 4 V gate drive device can be driven from 5 V sourceApplicationLow frequency power switchingSpecifications Item Symbol Ratings Unit ...
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Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSX |
-30 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
-2 |
A |
Drain peak current |
ID(pulse) |
-4 |
A |
Body to drain diode reverse drain current |
IDR |
-2 |
A |
Channel dissipation |
Pch*2 |
1 |
W |
Channel temperature |
Tch |
150 |
°C |
Storage temperature |
Tstg |
55 to +150 |
°C |