Features: · Low on-resistance· High speed switching· Low drive current· 2.5 V gate drive device can be driven from 3 V sourceApplicationHigh speed power switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSX -20 V Gate to source vo...
2SJ361: Features: · Low on-resistance· High speed switching· Low drive current· 2.5 V gate drive device can be driven from 3 V sourceApplicationHigh speed power switchingSpecifications Item Symbo...
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Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSX |
-20 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
-2 |
A |
Drain peak current | ID(pulse)*1 |
-4 |
A |
Body to drain diode reverse drain current |
IDR |
-2 |
A |
Channel dissipation |
Pch*1 |
1 |
W |
Channel temperature |
Tch |
150 |
°C |
Storage temperature |
Tstg |
55 to +150 |
°C |