Features: • New-type compact package Has advantages of packages for small signals and for power transistors, and compensates those disadvantages• Can be directly driven by an IC operating at 5 V.• Low on-resistance RDS(ON) = 0.40 W MAX. @VGS = 4 V, ID = 1.5 A RDS(ON) = 0.30 W MAX...
2SJ358: Features: • New-type compact package Has advantages of packages for small signals and for power transistors, and compensates those disadvantages• Can be directly driven by an IC operatin...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Drain-Source Voltage |
VDSS |
VGS = 0 |
60 |
V |
Gate-Source Voltage |
VGSS |
VDS = 0 |
20/+10 |
V |
Drain Current (DC) |
ID(DC) |
/+3.0 |
A | |
Drain Current (Pulse) |
ID(pulse) |
PW 10 ms Duty Cycle 1 % |
/+6.0 |
A |
Total Power Loss |
PT |
Mounted on ceramic board of 7.5 c x 0.7 mm |
2.0 |
W |
Channel Temperature |
Tch |
150 |
°C | |
Storage Temperature |
Tstg |
55 to +150 |
°C |
The 2SJ358 is a P-channel vertical MOS FET that can be used as a switching element. The 2SJ358 can be directly driven by an IC operating at 5 V.
The 2SJ358 features a low on-resistance and excellent switching characteristics, and is suitable for applications such as actuator driver and DC/DC converter.