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2SJ357

Features: • New-type compact package Has advantages of packages for small signals and for power transistors, and compensates those disadvantages • Can be directly driven by an IC operating at 5 V.• Low on-resistance RDS(ON) = 0.35 W MAX. @VGS = 4 V, ID = 1.5 A RDS(ON) = 0.20 W MA...

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SeekIC No. : 004225133 Detail

2SJ357: Features: • New-type compact package Has advantages of packages for small signals and for power transistors, and compensates those disadvantages • Can be directly driven by an IC operati...

2SJ357 Data Sheet

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Part Number:
2SJ357
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/3

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Product Details

Description



Features:

• New-type compact package Has advantages of packages for small signals and for power transistors, and compensates those disadvantages • Can be directly driven by an IC operating at 5 V.
• Low on-resistance
    RDS(ON) = 0.35 W MAX. @VGS = 4 V, ID = 1.5 A
    RDS(ON) = 0.20 W MAX. @VGS = 10 V, ID = 1.5 A


Specifications

Parameter
Symbol
Conditions
Ratings
Unit
Drain-Source Voltage
VDSS
 VGS = 0
60
V
Gate-Source Voltage
VGSS
 VDS = 0
20/+10
V
Drain Current (DC)
ID(DC)
  
/+3.0
A
Drain Current (Pulse)
ID(pulse)
 PW 10 ms
Duty Cycle 1 %
/+6.0
A
Total Power Loss
PT
 Mounted on ceramic board of 7.5 c x 0.7 mm
2.0
W
Channel Temperature
Tch
  
150
°C
Storage Temperature
Tstg
  
55 to +150
°C



Description

The 2SJ357 is a P-channel vertical MOS FET that can be used as a switching element. The 2SJ357 can be directly driven by an IC operating at 5 V.

The 2SJ357 features a low on-resistance and excellent switching characteristics, and is suitable for applications such as actuator driver and DC/DC converter.


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