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2SJ356

Features: • Can be directly driven by 5-V IC• Low ON resistance RDS(on) = 0.95 W MAX. @VGS = 4 V, ID = 1.0 A RDS(on) = 0.50 W MAX. @VGS = 10 V, ID = 1.0 ASpecifications Parameter Symbol Conditions Ratings Unit Drain-Source Voltage VDSS VGS = ...

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SeekIC No. : 004225132 Detail

2SJ356: Features: • Can be directly driven by 5-V IC• Low ON resistance RDS(on) = 0.95 W MAX. @VGS = 4 V, ID = 1.0 A RDS(on) = 0.50 W MAX. @VGS = 10 V, ID = 1.0 ASpecifications Parame...

2SJ356 Data Sheet

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Part Number:
2SJ356
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Can be directly driven by 5-V IC
• Low ON resistance
    RDS(on) = 0.95 W MAX. @VGS = 4 V, ID = 1.0 A
    RDS(on) = 0.50 W MAX. @VGS = 10 V, ID = 1.0 A


Specifications

Parameter
Symbol
Conditions
Ratings
Unit
Drain-Source Voltage
VDSS
 VGS = 0
60
V
Gate-Source Voltage
VGSS
 VDS = 0
20/+10
V
Drain Current (DC)
ID(DC)
  
±2.0
A
Drain Current (Pulse)
ID(pulse)
 PW 10 ms
Duty Cycle 1 %
±4.0
A
Total Power Loss
PT
 16 c x 0.7 mm, ceramic substrate used
2.0
W
Channel Temperature
Tch
  
150
°C
Storage Temperature
Tstg
  
55 to +150
°C



Description

The 2SJ356 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V.

2SJ356 has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters.


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