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2SJ355

Features: • Can be directly driven by 5-V IC• Low ON resistance RDS(on) = 0.60 W MAX. @VGS = 4 V, ID = 1.0 A RDS(on) = 0.35 W MAX. @VGS = 10 V, ID = 1.0 ASpecifications PARAMETER SYMBOL TEST CONDITIONS RATING UNIT Drain to Source Voltage VDSS VGS=0 -30 ...

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SeekIC No. : 004225131 Detail

2SJ355: Features: • Can be directly driven by 5-V IC• Low ON resistance RDS(on) = 0.60 W MAX. @VGS = 4 V, ID = 1.0 A RDS(on) = 0.35 W MAX. @VGS = 10 V, ID = 1.0 ASpecifications PARAMETER ...

2SJ355 Data Sheet

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Part Number:
2SJ355
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/22

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Product Details

Description



Features:

• Can be directly driven by 5-V IC
• Low ON resistance
    RDS(on) = 0.60 W MAX. @VGS = 4 V, ID = 1.0 A
    RDS(on) = 0.35 W MAX. @VGS = 10 V, ID = 1.0 A


Specifications

PARAMETER

SYMBOL

TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
VDSS
 VGS=0
-30
V
Gate to Source Voltage
VGSS
 VDS=0
-20/+10
V
Drain Current (DC)
ID(DC)
  
±2.0
A
Drain Current (Pulse)
ID(pules)
 PW 10 ms
Duty cycle 1 %
±4.0
A
Total Power Dissipation
PT
 16 cm2 x 0.7 mm, ceramic substrate used
2.0
W
Channel Temperature
Tch
  
150
Storage Temperature
Tstg
  
55 to +150



Description

The 2SJ355 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V.

2SJ355 has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters.


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