2SJ344/KQ

The 2SJ344/KQ is a kind of TOSHIBA field effect transistor, silicon P channel MOS type which is desiged for the high speed switching and anarog switch applications. Features of 2SJ344/KQ are:(1)enhancement-mode;(2)low gate threshold voltage: Vth= -0.8 to -2.5 V;(3)small package;(4)complementary to 2SK1827;(5)high speed.

The absolute maximum ratings of 2SJ344/KQ can be summerized as:(1): drain-source voltage, VDSS is -50 V; (2): gate-source voltage is -7 V; (3): DC drain current, ID is -50 mA; (5): drain power dissipation(ta is 25), PD is 100 mW; (6): channel temperature, Tch is 150; (7): storage temeprature range, tstg is -55 to 150.

The electrical characteristics of 2SJ344/KQ can be summerized as:(1): gate leakage current, IGSS is -1 uA; (2): drain-source breakdown voltage, V(BR)DSS is -50 V; (3): drain cut-off current, IDSS is -1 uA; (4): input capacitance: 10.4 pF; (5): output capacitance is 7.2 pF; (6) reverse transfer chapacitance is 1.9 pF. If you want to know more information such as the electrical characteristics about 2SJ344/KQ, please download the datasheet in www.seekic.com or www.chinaicmart.com.