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2SJ343

Application• Low threshold voltage: Vth = −0.8~−2.5 V• High speed• Enhancement-mode• Small package• Complementary to 2SK1826Specifications Characteristics Symbol Rating Unit Drain-source voltage VDS −50 V Gate-source voltage VGSS &...

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SeekIC No. : 004225115 Detail

2SJ343: Application• Low threshold voltage: Vth = −0.8~−2.5 V• High speed• Enhancement-mode• Small package• Complementary to 2SK1826Specifications Characterist...

2SJ343 Data Sheet

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Part Number:
2SJ343
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

• Low threshold voltage: Vth = −0.8~−2.5 V
• High speed
• Enhancement-mode
• Small package
• Complementary to 2SK1826


Specifications

Characteristics Symbol Rating Unit
Drain-source voltage VDS −50 V
Gate-source voltage VGSS −7 V
Gate-source voltage ID −50 mA
Drain power dissipation PD 200 mW
Channel temperature Tch 150
Storage temperature range Tstg −55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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