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2SJ338

Application·High breakdown voltage : VDSS= 180 V· High forward transfer admittance : |Yfs| = 0.7 S (typ.) ·Complementary to 2SK2162 Specifications Characteristic Symbol Rating Unit Drainsource voltage VDSS -180 V Gatesource voltage VGSS ±20 V Drain cu...

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2SJ338: Application·High breakdown voltage : VDSS= 180 V· High forward transfer admittance : |Yfs| = 0.7 S (typ.) ·Complementary to 2SK2162 Specifications Characteristic Symbol Rating Unit...

2SJ338 Data Sheet

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Part Number:
2SJ338
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5000

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Upload time: 2024/6/3

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Product Details

Description



Application

·High breakdown voltage  : VDSS= 180 V 
· High forward transfer admittance : |Yfs| = 0.7 S (typ.) 
·Complementary to 2SK2162


Specifications

Characteristic
Symbol
Rating
Unit
Drainsource voltage
VDSS
-180
V
Gatesource voltage
VGSS
±20
V
Drain current (Note 1)
ID
-1
A
Power dissipation (Tc=25)
PD
20
W
Channel temperature
Tch
150
Storage temperature range
Tstg
-55~150


Note 1: Ensure that the channel temperature does not exceed 150.

Note 2:  Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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