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2SJ334

Application4-V gate driveLow drain−source ON resistance : RDS (ON) = 29 m (typ.) High forward transfer admittance : |Yfs| = 23 S (typ.)Low leakage current : IDSS = −100 A (max) (VDS = −60 V)Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)Spec...

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SeekIC No. : 004225110 Detail

2SJ334: Application4-V gate driveLow drain−source ON resistance : RDS (ON) = 29 m (typ.) High forward transfer admittance : |Yfs| = 23 S (typ.)Low leakage current : IDSS = −100 A (max) (VDS = &#...

2SJ334 Data Sheet

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Part Number:
2SJ334
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Application

4-V gate drive
Low drain−source ON resistance : RDS (ON) = 29 m (typ.)
High forward transfer admittance : |Yfs| = 23 S (typ.)
Low leakage current : IDSS = −100 A (max) (VDS = −60 V)
Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)


Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−60
V
Drain?gate voltage (RGS = 20 k)
VDGR
−60
V
Gate?source voltage
VGSS
±20
V
Drain current DC (Note 1)
ID
−30
A
Pulse    (Note 1)
IDP
−120
Drain power dissipation (Tc = 25)
PD
45
W
Single pulse avalanche energy
                                           (Note 2)
EAS
936
mJ
Avalanche current
IAR
−30
A
Repetitive avalanche energy (Note 3)
EAR
4.5
mJ
Channel temperature
Tch
150
Storage temperature range
TSTG
-55 ~ 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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