2SJ326

SpecificationsDescriptionThe 2SJ326 is a kind of MOS field effect power transistor, switching P channel MOS type which is desiged for the solenoid, motor and lamp driver applications. Features of 2SJ325-Z-E1 are:(1)low on-state resistance;(2)low Ciss = 320 pF typ.;(3)built-in G-S gate protection d...

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SeekIC No. : 004225106 Detail

2SJ326: SpecificationsDescriptionThe 2SJ326 is a kind of MOS field effect power transistor, switching P channel MOS type which is desiged for the solenoid, motor and lamp driver applications. Features of 2S...

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Part Number:
2SJ326
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/22

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Description

The 2SJ326 is a kind of MOS field effect power transistor, switching P channel MOS type which is desiged for the solenoid, motor and lamp driver applications. Features of 2SJ325-Z-E1 are:(1)low on-state resistance;(2)low Ciss = 320 pF typ.;(3)built-in G-S gate protection diode;(4)isolated TO-220 package.

The absolute maximum ratings of 2SJ326 can be summerized as:(1): drain-source voltage, VDSS is -60 V; (2): gate-source voltage is +/- 20 V; (3): DC drain current, ID is +/- 2.0 A; (5): total power dissipation (Ta is 25) is 20 W; (6): channel temperature, Tch is 150 ; (7): storage temeprature range, tstg is -55 to 150 .

The electrical characteristics of 2SJ326 can be summerized as:(1): gate leakage current, IGSS is +/-10 uA; (2): gate to source cutoff voltage is -1.0 to -2.0 V; (3): drain cut-off current, IDSS is -10 uA; (4): input capacitance: 320 pF; (5): output capacitance is 220 pF; (6) reverse transfer chapacitance is 75 pF; (7)gate source charge is 1.0 nC and (8)gate-drain charge is 5 nC. If you want to know more information such as the electrical characteristics about 2SJ326, please download the datasheet in www.seekic.com or www.chinaicmart.com.




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