Features: `Low on-state resistance RDS(on)=83m (VGS=-10V,ID=-2A) RDS(on)=0.15 (VGS=-4V,ID=-1.6A)`Built-in G-S Gate Protection DiodeSpecifications Parameter Symbol Rating Unit Drain to source voltage VDSS 30 V Gate to source voltage (DC) VGSS -20,+10 Gate to source voltage (...
2SJ325: Features: `Low on-state resistance RDS(on)=83m (VGS=-10V,ID=-2A) RDS(on)=0.15 (VGS=-4V,ID=-1.6A)`Built-in G-S Gate Protection DiodeSpecifications Parameter Symbol Rating Unit Drain to sou...
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Parameter | Symbol | Rating | Unit |
Drain to source voltage | VDSS | 30 | V |
Gate to source voltage (DC) | VGSS | -20,+10 | |
Gate to source voltage (AC) | VGSS | ±20 | V |
Drain current (DC) | ID | ±4.0 | A |
Pulsed Drain Current * | ID | ±16 | A |
Power Dissipation TA=25 TA=25 |
PD | 20 1.0 |
W/ |
Channel temperature | Tch | 150 | |
Storage Temperature | Tstg | -55 to 150 |