2SJ319(L)

      2SJ319(L) is a kind of silicon P channel MOS FET high speed power switching. And it has five unique features: The first one is low on-resistance. The second one is high speed switching. The third one is low drive current . The forth one is no secondary breakdown. The fifth one is it is suitable for switching regulator , DC-DC converter.
      There are some absolute maximum ratings about 2SJ319(L). Drain to source voltage(VDSS) is -200 V. Gate to souce voltage (V_GSS) is ±20 V. Drain current (I_D) is -3A. Drain peak current(ID(pulse)) is -12A. Body to drain diode reverse drain current(I_DR) is -3A. Channel dissipation(Pch) is 20W.Channel temperature(Tch) is 150. Storage temperature(Tstg) is -55 to +150. Otherwise, there are also some electrical characterostocs about it. Drain to source breakdown voltage(V_(BR)DSS ) is -200 V min when ID is -10 mA and V_GS is 0. Gate to source breakdown voltage(V_(BR)GSS) is ±20V min when I_G is ±100 A and V_Gs is 0.Gate to source leak current (I_GSS) is ±10 A max when V_GS is±16 V, V_DS is 0.Zero gate voltage drain current(I_DSS) is100 A max when V_DS is160 V, VGS is 0.Gate to source cutoff voltage (V_{GS (off)} ) is2.0 V min and4.0 V max when ID is 1 mA, V_DS is 10 V.Static drain to source on state resistance (RDS (on)) is 1.7min and 2.3 typ when ID is2 A, VGS is10 V .Forward transfer admittance (|yfs|) is 1.0 S min and 1.7  S when I_D is 2 A, V_DS is 10 V.Input capacitance(Ciss)is 330 pF typ when V_DS is 10 V, V_GS is 0 and f is 1 MHz.Output capacitance (Coss) is 130pF typ when V_DS is 10 V, VGS is 0 and f is 1 MHz.Reverse transfer capacitance (C_rss) is  25pF typ when V_DS is 10 V, V_GS is 0 and f is 1 MHz.Turn-on delay time (t_{d (on)} ) is 10  ns when I_D is 2 A, V_GS is 10 V and R_L is 15 .Rise time (tr) is  30 ns when ID is 2 A, V_GS is 10 V and R_L is 15 .Turn-off delay time (t_{d (off)} ) is 40  ns when I_D is 2 A, V_GS is 10 V and RL is 15 . Fall time ( tf) is 30  ns when I_D is 2 A, V_GS is 10 V and R_L is 15 .Body to drain diode forward voltage V_{DF( tf)} is  1.15 V typ when IF is 3 A, V_GS is 0.Body to drain diode reverse recovery time ( t_rr) is 180  ns when IF is 3 A, V_GS is 0, and diF/dt is 50 A/s.
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